FIG.1 110 112 RAW MATERIAL GAS 113 PUMPING SYSTEM 100 FIG.2 210 214 212 RAW MATERIAL GAS 213 PUMPING SYSTEM 100 FIG.3 310 311 314 312 RAWMATERIAL GAS 313 PUMPING SYSTEM 100 FIG.4 START LOAD SAMPLEINTO CHAMBER -410 SUPPLY RAW MATERIAL GAS WITHIN CHAMBER TO DEPOSIT -420 THINFILMINUNITOF ATOMICLAYER ON SAMPLE 430 IS REACTION YES GASDETECTED? NO DIACONTINUE SUPPLY OFRAW 440 MATERIAL GAS INTO CHAMBER END Analyzer). The mass analyzer may be positioned such that it ATOMICLAYERDEPOSITIONEQUIPMENTAND METHOD can detect the gases near the edge of the sample adjacent to the exhaust line. The mass analyzer may be positioned such [0001] The present application claims priority under 35 U.S.C. 119 and 35 U.S.C. 365 to Korean Patent Application that it can detect the gases at the entrance of the exhaust line. No. 10-2005-0123319 (filed on Dec. 14, 2005), which is [0007] Embodiments relateto anALDmethod including: hereby incorporated by reference in its entirety. loading a sample within a chamber; supplying a raw material gas into the chamberto deposit a thinfilm over the sample, BACKGROUND wherein the film may be just one atom or molecular layer thick; using a mass analyzer to determine whether or not [0002] In general, thin film manufacturing methods such reaction gases are detectable within the chamber; continuing as chemical vapor deposition (CVD), atomic layer deposi- the supply of the raw material gas while the reaction gas is tion (ALD) and the like are used to deposit a thin film with detected, and discontinuing the supply of the raw material a predetermined thickness over a substrate such as a semi- gas when the reaction gas is not detected but the raw conductor wafer or glass. Among these methods, ALD has material gas is detected. been expected to be a next-generation method of depositing a thin film, because the ability to control the deposition BRIEF DESCRIPTION OF THE DRAWINGS process is excellent. In an ALD process, a chemically reactive gas is supplied to deposition equipment, in a similar [0008] FIG. 1 is a drawing that schematically shows ALD fashion to CVD. When a film is deposited by CVD, all equipment. reaction substances togetherform a thin film when exposed [0009] Example FIG. 2 is a drawing that shows an ALD to the surface of a wafer. When a film is deposited by the equipment with a QMA near the edge of the sample adjacent pulses, and isolated from one another by a purge gas. The to the exhaust line, in accordance with embodiments. pulse of each reaction substance causes a delicate single- [0010]ExampleFIG.3 is a drawing that shows an ALD layered filmgrowth by causing a chemical reactionwith the equipment with a QMA at the entrance of the exhaust line, surface of a wafer. Since the ALD method has the advantage in accordance with embodiments. of self-limiting reactions, a precise film thickness control [0011] Example FIG. 4 is a flowchart illustrating an ALD may be realized. method using an ALD equipment, in accordance with [0003]Referringto FIG.1,theALDequipment 110 embodiments. includes: a chamber 111 containing a sample 100 such as a wafer positioned therein, the chamber defining a reaction DETAILEDDESCRIPTION space above the sample 100; a supply line 112 through which a raw material gas is supplied into the reaction space; [0012] Referring to FIG.2,the ALD equipment 210 and an exhaust line 113 through which a reaction gas within includes a chamber 211 containing a sample 100, such as a the reaction space of the chamber 1ii is exhausted to a wafer, positioned therein and defining a reaction space pumping system.Inthedrawing,arrowswithin thechamber above the sample 100. Arrows drawn within the chamber 111 indicate the movement of gas. 2i1 indicate themovement of gas.The gas may be divided into a raw material gas and a reaction gas. The term raw [0004] When a thin film is deposited, the ALD equipment material gas designates a precursor material of a thin film, does not collect or produce information on reactions occur-